Process Selector Guide

Parameter/ Technology	1um	0.8 um	0.6 um	0.15 um	0.1 um	0.1 um	0.25 um
	power InP	digital InP	digital InP	GaAs Power	GaAs	InP	GaN
	HBT	HBT (2Met)	HBT (4Met)	PHEMT	PHEMT	PHEMT	HEMT
Ft (peak)	80 GHz	160 GHz	>250 GHz	80 GHz	120 GHz	180 GHz	55 GHz
Fmax (peak)	150 GHz	>200 GHz	>300 GHz	200 GHz	250 GHz	350 GHz	100 GHz
Beta/Gm	25	80	80	550	650	1200	350
Beta/Gm	25	80	80	mS / mm	mS / mm	mS / mm	mS / mm
Vce / Vds (Max)	7.5V	5V	4V	5V	4V	1.2V	25V
Current Density (Max)	0.7	1.5	2.5	250	250	150	250
Current Density (Max)	mA / um²	mA / um²	mA / um²	mA / mm	mA / mm	mA/ mm	mA / mm
Wafer Thickness	75 um	75 um	75 um	50 & 100 um	50 & 100 um	75 um	100 um
Airbridged Metal Available	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Backside Vias	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Diode Type	Schottky	Schottky	Schottky	Gate Source	Gate Source	Gate Source	NA
Wafer Size	100 mm	100 mm	100 mm	100 mm	100 mm	100 mm	3”
Highlight/ Application	• Mixed Signal designs	• Fiber Optic applications up to 25 Gbps	• Fiber Optic applications up to 40 & 100 Gbps	• High power amps < 5W up to 60 GHz	• Low Noise Amplifier up to 100 GHz	• Very Low noise Amplifiers	• Very high power amplifiers < 10W up to 40 GHz
	• ADC/DAC	• High Speed digital circuitry	• High Speed digital circuitry	• Linear amplifiers	• Power amplifiers < 1W up to 100 GHz	• mmW sensors	• Very high power amplifiers < 10W up to 40 GHz
				• Driver amplifiers	• Power amplifiers < 1W up to 100 GHz	• Low power dissipation
				• Up/Dwn cnverters	• Up/Dwn cnverters	• Low power dissipation
Commercial Qualification Date	TBD	NOW	Q1 2012	NOW	NOW	NOW	NOW